Micron G11 闪存：同面积容量翻倍，2027 下半年量产
Micron 新闪存 G11 堆到 400 多层，同面积容量翻倍、速度快 1.5 倍还省电，专为 AI 数据中心的大 SSD 准备。
Micron 的下一代 NAND 闪存 G11 在同样硅片面积上可容纳约两倍于现役 G9 的数据。G9 堆叠 276 层存储单元，G11 跳过 G10 命名，堆叠超过 400 层并提高单元密度，数据搬运速度提升至 1.5 倍，每比特能耗降低超过 25%。G11 计划 2027 年下半年量产，但层数增加和第二片键合晶圆也推高了成本，每 GB 降价幅度尚未公布。
Micron’s next memory chip generation, G11, will fit roughly twice as much data on the same patch of silicon as today’s G9, the main route to bigger SSDs, which AI data centers now buy in huge amounts.
G9 stacks its storage cells 276 floors high. Micron skipped the G10 name and reworked its next chip for AI, calling it G11: it stacks over 400 floors and packs each cell tighter, so the same size chip holds about twice the data, moves it up to 1.5x faster and uses over 25% less energy to move each bit.
Volume production starts in the second half of 2027, so drives using G11 arrive later, and Micron hasn’t said how much cheaper each gigabyte will get, since taller stacks and a second bonded wafer also add cost.
