Samsung 西安厂推进 286 层 V9 NAND 升级，项目代号 Monami
Samsung 西安厂要从 200 层升到 286 层 NAND，SK Hynix 大连厂也想升到 240 层，但美方只批继续运营不批升级，这里面的博弈很值得细看。
Samsung 在西安的工厂贡献其全球约 40% 的 NAND 产量，正通过内部项目 Monami 把约 200 层芯片升级为 286 层 V9 芯片，目标 12 月达到月产 5,000 片晶圆，2027 年 12 月达到 40,000 片。SK Hynix 计划将大连厂从 192 层 NAND 提升至 240 层或以上，并可能向美方申请在大连研发 300 层以上芯片。两家公司均称升级是与华盛顿协商后进行，但美国商务部 2025 年曾表示只许可这些工厂继续运营，不包括产能扩张或技术升级。
Samsung is converting its Xian plant, which produces about 40% of its global NAND, from roughly 200-layer chips to 286-layer V9 chips under an internal project called “Monami”.
That conversion aims for 5,000 wafers a month in December and 40,000 wafers a month by December 2027
SK Hynix wants to lift its Dalian plant from 192-layer NAND to 240 layers or more, and one person says it is already authorised to make chips up to 240 layers there.
SK Hynix may also seek US permission for research on 300-plus-layer chips at Dalian, work meant to prepare for possible NAND production in the US.
Both companies say the upgrades are happening in consultation with Washington, yet the Commerce Department said in 2025 it would license only continued operation of these plants, not capacity growth or technology upgrades, and the extent of any new approvals is unknown.
Samsung insists the work meets US export rules and serves global customers, including US buyers, without adding production capacity or new facilities.
- Nikkei Asia10-21 04:34原文
