TSMC 否认 Nvidia 推动 3D DRAM 传闻：坚持纯逻辑代工
Nvidia 内存短缺闹得凶，传闻 TSMC 要做 DRAM，官方直接否认了。文中把 3D DRAM 的技术瓶颈和时间线讲得挺清楚。
TSMC 否认了“应 Nvidia 要求制定 3D DRAM 计划”的报道，重申将保持纯逻辑代工定位。业内分析指出，3D DRAM 即便启动，缓解 AI 内存短缺至少需 5 年，而 Micron 也计划至少再推进 4 代平面工艺后才转向 3D DRAM。TSMC 目前通过制造 HBM 基底芯片和用 SoIC 混合键合技术封装内存与逻辑，从内存产业获利。另有韩国媒体报道，Nvidia 希望三星、SK hynix 和 Micron 在 TSMC 3nm 工艺上生产定制 NVHBM 基底芯片。
tomshardware: TSMC says it will stay a pure logic foundry, denying a report that Nvidia pushed it toward 3D DRAM.
There was a report that TSMC began drafting 3D DRAM plans after a request from Nvidia, its largest customer.
Nvidia has reason to look, because AI demand has drained DRAM supply and turned memory into the part that decides whether accelerators ship.
3D DRAM stacks memory cells vertically to raise capacity per wafer, yet even Micron plans at least 4 more planar nodes before adopting it.
That timeline means a TSMC entry couldn’t ease shortages for at least 5 years, and TSMC lacks a competitive planar DRAM process to build from.
Instead, it already profits from memory without making it, by building HBM base dies and bonding memory to logic with SoIC hybrid bonding.
Separately, a Korean report says Nvidia wants Samsung, SK hynix and Micron to build its custom NVHBM base dies on TSMC’s 3nm process, which would give TSMC memory revenue without DRAM’s price swings.
